Surface potential response from GaP nanowires synthesized with mixed crystal phases

B Kyeyune; Ekaterina Soboleva; P Geydt; Vladislav Khayrudinov; Prokhor Alekseev; Harri Lipsanen; E Lähderanta

doi:10.1088/1742-6596/1400/4/044018

Surface potential response from GaP nanowires synthesized with mixed crystal phases

B Kyeyune, Ekaterina Soboleva, P Geydt, Vladislav Khayrudinov, Prokhor Alekseev, Harri Lipsanen, E Lähderanta

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Abstract

In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

Original language	English
Article number	044018
Number of pages	6
Journal	Journal of Physics: Conference Series
Volume	1400
DOIs	https://doi.org/10.1088/1742-6596/1400/4/044018 https://doi.org/10.1088/1742-6596/1400/4/044018
Publication status	Published - 2019
MoE publication type	A4 Conference publication
Event	International Conference on PhysicA.SPb - Saint Petersburg, Russian Federation Duration: 22 Oct 2019 → 24 Oct 2019

Keywords

Atomic Force Microscopy (AFM)
Nanowires (NWs)
Kelvin Probe Force Microscopy (KPFM)
Wurzite (WZ)
Zincblende (ZB)
Gallium phosphide (GaP)
WURTZITE

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@article{afaa7f9383c24f6d82e8ee3a25b30af1,

title = "Surface potential response from GaP nanowires synthesized with mixed crystal phases",

abstract = "In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.",

keywords = "Atomic Force Microscopy (AFM), Nanowires (NWs), Kelvin Probe Force Microscopy (KPFM), Wurzite (WZ), Zincblende (ZB), Gallium phosphide (GaP), WURTZITE",

author = "B Kyeyune and Ekaterina Soboleva and P Geydt and Vladislav Khayrudinov and Prokhor Alekseev and Harri Lipsanen and E L{\"a}hderanta",

year = "2019",

doi = "10.1088/1742-6596/1400/4/044018",

language = "English",

volume = "1400",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "Institute of Physics Publishing",

note = "International Conference on PhysicA.SPb ; Conference date: 22-10-2019 Through 24-10-2019",

}

TY - JOUR

T1 - Surface potential response from GaP nanowires synthesized with mixed crystal phases

AU - Kyeyune, B

AU - Soboleva, Ekaterina

AU - Geydt, P

AU - Khayrudinov, Vladislav

AU - Alekseev, Prokhor

AU - Lipsanen, Harri

AU - Lähderanta, E

PY - 2019

Y1 - 2019

N2 - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

AB - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

KW - Atomic Force Microscopy (AFM)

KW - Nanowires (NWs)

KW - Kelvin Probe Force Microscopy (KPFM)

KW - Wurzite (WZ)

KW - Zincblende (ZB)

KW - Gallium phosphide (GaP)

KW - WURTZITE

U2 - 10.1088/1742-6596/1400/4/044018

DO - 10.1088/1742-6596/1400/4/044018

M3 - Conference article

SN - 1742-6588

VL - 1400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 044018

T2 - International Conference on PhysicA.SPb

Y2 - 22 October 2019 through 24 October 2019

ER -

Surface potential response from GaP nanowires synthesized with mixed crystal phases

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Keywords

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