Surface potential response from GaP nanowires synthesized with mixed crystal phases

B Kyeyune, Ekaterina Soboleva, P Geydt, Vladislav Khayrudinov, Prokhor Alekseev, Harri Lipsanen, E Lähderanta

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In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.
Original languageEnglish
Article number044018
Number of pages6
JournalJournal of Physics: Conference Series
Publication statusPublished - 2019
MoE publication typeA4 Conference publication
EventInternational Conference on PhysicA.SPb - Saint Petersburg, Russian Federation
Duration: 22 Oct 201924 Oct 2019


  • Atomic Force Microscopy (AFM)
  • Nanowires (NWs)
  • Kelvin Probe Force Microscopy (KPFM)
  • Wurzite (WZ)
  • Zincblende (ZB)
  • Gallium phosphide (GaP)


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