Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Research output: Contribution to journalArticle


Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg Academic University
  • Russian Academy of Sciences
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • St. Petersburg State Polytechnical University


It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.


Original languageEnglish
Pages (from-to)1619-1621
Number of pages3
Issue number12
Publication statusPublished - Dec 2016
MoE publication typeA1 Journal article-refereed

    Research areas


ID: 11072986