Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg Academic University
  • Russian Academy of Sciences
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • St. Petersburg State Polytechnical University

Abstract

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.

Details

Original languageEnglish
Pages (from-to)1619-1621
Number of pages3
JournalSemiconductors
Volume50
Issue number12
Publication statusPublished - Dec 2016
MoE publication typeA1 Journal article-refereed

    Research areas

  • PHOTOLUMINESCENCE

ID: 11072986