Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

I. V. Shtrom*, A. D. Bouravleuv, Yu B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.

Original languageEnglish
Pages (from-to)1619-1621
Number of pages3
JournalSemiconductors
Volume50
Issue number12
DOIs
Publication statusPublished - Dec 2016
MoE publication typeA1 Journal article-refereed

Keywords

  • PHOTOLUMINESCENCE

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