Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Standard

Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks. / Pasanen, Toni; Vähänissi, Ville; Theut, Nicholas; Savin, Hele.

7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Elsevier, 2017. p. 307-312 (Energy Procedia; Vol. 124).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Pasanen, T, Vähänissi, V, Theut, N & Savin, H 2017, Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks. in 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Energy Procedia, vol. 124, Elsevier, pp. 307-312, International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany, 03/04/2017. https://doi.org/10.1016/j.egypro.2017.09.304

APA

Pasanen, T., Vähänissi, V., Theut, N., & Savin, H. (2017). Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks. In 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 (pp. 307-312). (Energy Procedia; Vol. 124). Elsevier. https://doi.org/10.1016/j.egypro.2017.09.304

Vancouver

Pasanen T, Vähänissi V, Theut N, Savin H. Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks. In 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Elsevier. 2017. p. 307-312. (Energy Procedia). https://doi.org/10.1016/j.egypro.2017.09.304

Author

Pasanen, Toni ; Vähänissi, Ville ; Theut, Nicholas ; Savin, Hele. / Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Elsevier, 2017. pp. 307-312 (Energy Procedia).

Bibtex - Download

@inproceedings{60e536272fe943db8dccb784db07c291,
title = "Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks",
abstract = "Black silicon (b-Si) is a promising surface structure for solar cells due to its low reflectance and excellent light trapping properties. While atomic layer deposited (ALD) Al2O3 has been shown to passivate efficiently lightly-doped b-Si surfaces and boron emitters, the negative fixed charge characteristic of Al2O3 thin films makes it unfavorable for the passivation of more commonly used n+ emitters. This work studies the potential of ALD SiO2/Al2O3 stacks for the passivation of b-Si phosphorus emitters fabricated by an industrially viable POCl3 gas phase diffusion process. The stacks have positive charge density (Qtot = 5.5·1011 cm-2) combined with high quality interface (Dit = 2.0·1011 cm-2eV-1) which is favorable for such heavily-doped n-type surfaces. Indeed, a clear improvement in emitter saturation current density, J0e, is achieved with the stacks compared to bare Al2O3 in both b-Si and planar emitters. However, although the positive charge density in the case of black silicon is even higher (Qtot = 2.0·1012 cm-2), the measured J0e is limited by the recombination in the emitter due to heavy doping of the nanostructures. The results thus imply that in order to obtain lower saturation current density on b-Si, careful optimization of the black silicon emitter profile is needed.",
keywords = "black silicon, surface passivation, phosphorus diffusion, atomic layer deposition, SiO2, Al2O3",
author = "Toni Pasanen and Ville V{\"a}h{\"a}nissi and Nicholas Theut and Hele Savin",
year = "2017",
month = "9",
day = "21",
doi = "10.1016/j.egypro.2017.09.304",
language = "English",
series = "Energy Procedia",
publisher = "Elsevier",
pages = "307--312",
booktitle = "7th International Conference on Silicon Photovoltaics, SiliconPV 2017",

}

RIS - Download

TY - GEN

T1 - Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

AU - Pasanen, Toni

AU - Vähänissi, Ville

AU - Theut, Nicholas

AU - Savin, Hele

PY - 2017/9/21

Y1 - 2017/9/21

N2 - Black silicon (b-Si) is a promising surface structure for solar cells due to its low reflectance and excellent light trapping properties. While atomic layer deposited (ALD) Al2O3 has been shown to passivate efficiently lightly-doped b-Si surfaces and boron emitters, the negative fixed charge characteristic of Al2O3 thin films makes it unfavorable for the passivation of more commonly used n+ emitters. This work studies the potential of ALD SiO2/Al2O3 stacks for the passivation of b-Si phosphorus emitters fabricated by an industrially viable POCl3 gas phase diffusion process. The stacks have positive charge density (Qtot = 5.5·1011 cm-2) combined with high quality interface (Dit = 2.0·1011 cm-2eV-1) which is favorable for such heavily-doped n-type surfaces. Indeed, a clear improvement in emitter saturation current density, J0e, is achieved with the stacks compared to bare Al2O3 in both b-Si and planar emitters. However, although the positive charge density in the case of black silicon is even higher (Qtot = 2.0·1012 cm-2), the measured J0e is limited by the recombination in the emitter due to heavy doping of the nanostructures. The results thus imply that in order to obtain lower saturation current density on b-Si, careful optimization of the black silicon emitter profile is needed.

AB - Black silicon (b-Si) is a promising surface structure for solar cells due to its low reflectance and excellent light trapping properties. While atomic layer deposited (ALD) Al2O3 has been shown to passivate efficiently lightly-doped b-Si surfaces and boron emitters, the negative fixed charge characteristic of Al2O3 thin films makes it unfavorable for the passivation of more commonly used n+ emitters. This work studies the potential of ALD SiO2/Al2O3 stacks for the passivation of b-Si phosphorus emitters fabricated by an industrially viable POCl3 gas phase diffusion process. The stacks have positive charge density (Qtot = 5.5·1011 cm-2) combined with high quality interface (Dit = 2.0·1011 cm-2eV-1) which is favorable for such heavily-doped n-type surfaces. Indeed, a clear improvement in emitter saturation current density, J0e, is achieved with the stacks compared to bare Al2O3 in both b-Si and planar emitters. However, although the positive charge density in the case of black silicon is even higher (Qtot = 2.0·1012 cm-2), the measured J0e is limited by the recombination in the emitter due to heavy doping of the nanostructures. The results thus imply that in order to obtain lower saturation current density on b-Si, careful optimization of the black silicon emitter profile is needed.

KW - black silicon

KW - surface passivation

KW - phosphorus diffusion

KW - atomic layer deposition

KW - SiO2

KW - Al2O3

U2 - 10.1016/j.egypro.2017.09.304

DO - 10.1016/j.egypro.2017.09.304

M3 - Conference contribution

T3 - Energy Procedia

SP - 307

EP - 312

BT - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017

PB - Elsevier

ER -

ID: 15342105