Surface deformation of the InGaN thin films deposited on a sapphire substrate

R. Nowak; T. Soga; M. Umeno

doi:10.1016/S0040-6090(96)09143-2

Surface deformation of the InGaN thin films deposited on a sapphire substrate

R. Nowak, T. Soga, M. Umeno

Not published at Aalto University

Nagoya Institute of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The study reports a research into the mechanical properties of InGaN films deposited on sapphire by the metalorganic chemical vapor deposition method, being, as such, related to the very recent construction of the blue-emitting laser diode. The surface deformation of the films has been investigated by means of depth-sensing indentation experiments. Undoped films and those doped with Mg have been examined. The analysis of the depth-sensing indentation data, providing complete information on the surface deformation of InGaN films, has been based on the energy principle of indentation. The results revealed that the hardness of InGaN is lower than that of sapphire crystal. On the other hand, InGaN was found to posses considerable toughness. The surface features appearing around the residual impressions were observed using atomic force microscopy. (C) 1997 Elsevier Science S.A.

Original language	English
Pages (from-to)	193-198
Number of pages	6
Journal	Thin Solid Films
Volume	295
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09143-2
Publication status	Published - 28 Feb 1997
MoE publication type	A1 Journal article-refereed

Keywords

anisotropy
hardness
monolayers
VAPOR-PHASE EPITAXY
LIGHT-EMITTING DIODES
ENERGY PRINCIPLE
GALLIUM NITRIDE
GAN
INDENTATION
TEMPERATURE
HARDNESS
GROWTH

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title = "Surface deformation of the InGaN thin films deposited on a sapphire substrate",

abstract = "The study reports a research into the mechanical properties of InGaN films deposited on sapphire by the metalorganic chemical vapor deposition method, being, as such, related to the very recent construction of the blue-emitting laser diode. The surface deformation of the films has been investigated by means of depth-sensing indentation experiments. Undoped films and those doped with Mg have been examined. The analysis of the depth-sensing indentation data, providing complete information on the surface deformation of InGaN films, has been based on the energy principle of indentation. The results revealed that the hardness of InGaN is lower than that of sapphire crystal. On the other hand, InGaN was found to posses considerable toughness. The surface features appearing around the residual impressions were observed using atomic force microscopy. (C) 1997 Elsevier Science S.A.",

keywords = "anisotropy, hardness, monolayers, VAPOR-PHASE EPITAXY, LIGHT-EMITTING DIODES, ENERGY PRINCIPLE, GALLIUM NITRIDE, GAN, INDENTATION, TEMPERATURE, HARDNESS, GROWTH",

author = "R. Nowak and T. Soga and M. Umeno",

year = "1997",

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day = "28",

doi = "10.1016/S0040-6090(96)09143-2",

language = "English",

volume = "295",

pages = "193--198",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier Science Inc.",

number = "1-2",

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TY - JOUR

T1 - Surface deformation of the InGaN thin films deposited on a sapphire substrate

AU - Nowak, R.

AU - Soga, T.

AU - Umeno, M.

PY - 1997/2/28

Y1 - 1997/2/28

N2 - The study reports a research into the mechanical properties of InGaN films deposited on sapphire by the metalorganic chemical vapor deposition method, being, as such, related to the very recent construction of the blue-emitting laser diode. The surface deformation of the films has been investigated by means of depth-sensing indentation experiments. Undoped films and those doped with Mg have been examined. The analysis of the depth-sensing indentation data, providing complete information on the surface deformation of InGaN films, has been based on the energy principle of indentation. The results revealed that the hardness of InGaN is lower than that of sapphire crystal. On the other hand, InGaN was found to posses considerable toughness. The surface features appearing around the residual impressions were observed using atomic force microscopy. (C) 1997 Elsevier Science S.A.

AB - The study reports a research into the mechanical properties of InGaN films deposited on sapphire by the metalorganic chemical vapor deposition method, being, as such, related to the very recent construction of the blue-emitting laser diode. The surface deformation of the films has been investigated by means of depth-sensing indentation experiments. Undoped films and those doped with Mg have been examined. The analysis of the depth-sensing indentation data, providing complete information on the surface deformation of InGaN films, has been based on the energy principle of indentation. The results revealed that the hardness of InGaN is lower than that of sapphire crystal. On the other hand, InGaN was found to posses considerable toughness. The surface features appearing around the residual impressions were observed using atomic force microscopy. (C) 1997 Elsevier Science S.A.

KW - anisotropy

KW - hardness

KW - monolayers

KW - VAPOR-PHASE EPITAXY

KW - LIGHT-EMITTING DIODES

KW - ENERGY PRINCIPLE

KW - GALLIUM NITRIDE

KW - GAN

KW - INDENTATION

KW - TEMPERATURE

KW - HARDNESS

KW - GROWTH

U2 - 10.1016/S0040-6090(96)09143-2

DO - 10.1016/S0040-6090(96)09143-2

M3 - Article

SN - 0040-6090

VL - 295

SP - 193

EP - 198

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Surface deformation of the InGaN thin films deposited on a sapphire substrate

Abstract

Keywords

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