Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy

M Nieminen*, T Sajavaara, E Rauhala, M Putkonen, Lauri Niinistö

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    LaAlO3 thin films were deposited by atomic layer epitaxy (ALE) from beta -diketonate-type precursors La(thd)(3) and Al(acac)(3). Ozone was used as an oxygen source. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire and SrTiO3(100) Substrates. The influence of the La:Al precursor pulsing ratio on the film growth and quality in the temperature range of 325-400 degreesC was studied in detail. Stoichiometry and impurity levels were measured using RBS, TOF-ERDA and XPS while the chemical type of carbon impurity was identified by FTIR. XRD and AFM were used to determine crystallinity and surface morphology. The films were transparent and uniform and their thickness could be accurately controlled by the number of deposition cycles. The as-deposited films were amorphous but became crystalline upon annealing at 900 degreesC. The annealed films grown on Si(100) and MgO(111)-buffered Si(100) substrates had a preferred (110) orientation whereas those grown on MgO(100)-buffered Si(100) substrates showed a preferred (100) orientation. Epitaxial and smooth LaAlO3 thin films were obtained on SrTiO3(100) after annealing at 900 degreesC, verified by measurement of the X-ray rocking curve of the (200) reflection and the AFM surface roughness. Stoichiometric LaAlO3 films contained

    Original languageEnglish
    Pages (from-to)2340-2345
    Number of pages6
    JournalJournal of Materials Chemistry
    Volume11
    Issue number9
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

    Keywords

    • CHEMICAL-VAPOR-DEPOSITION
    • BUFFER LAYERS
    • SILICON
    • OXIDE
    • SRTIO3(100)
    • PEROVSKITE
    • PRECURSORS
    • SI(100)
    • SYSTEM
    • MOCVD

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