A study of the application of atomic layer deposition (ALD) technique in relation to surface chemistry of trimethylaluminum/water process, is presented. The study also provides an insight to the of surface chemistry of atomic layer deposition (ALD) technique. The study also discusses the mechanism of two-reactant ALD process and includes descriptions about the physicochemical requirements of self-terminating reactions, reaction kinetics, typical chemisorption reactions, and effect of temperature on number of cycles on growth per cycles (GPC). The issues hampering a physicochemical process are also discussed. The results of the study were compared to the growth experiments on flat substrates and reaction chemistry of high-surface-area materials.