Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Riikka L. Puurunen*

*Corresponding author for this work

Research output: Contribution to journalReview Articlepeer-review

1899 Citations (Scopus)

Abstract

A study of the application of atomic layer deposition (ALD) technique in relation to surface chemistry of trimethylaluminum/water process, is presented. The study also provides an insight to the of surface chemistry of atomic layer deposition (ALD) technique. The study also discusses the mechanism of two-reactant ALD process and includes descriptions about the physicochemical requirements of self-terminating reactions, reaction kinetics, typical chemisorption reactions, and effect of temperature on number of cycles on growth per cycles (GPC). The issues hampering a physicochemical process are also discussed. The results of the study were compared to the growth experiments on flat substrates and reaction chemistry of high-surface-area materials.

Original languageEnglish
Article number121301
Pages (from-to)1-52
JournalJournal of Applied Physics
Volume97
Issue number12
DOIs
Publication statusPublished - 2005
MoE publication typeA2 Review article in a scientific journal

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