Abstract
Epitaxial graphene layers are produced with the aid of thermal destruction of the surface of a semi-insulating SiC substrate. Raman spectroscopy and atomic-force microscopy are employed in the study of the film homogeneity. A prototype of the gas sensor based on the films is fabricated. The device is sensitive to the NO2 molecules at a level of 5 ppb (five particles per billion). A possibility of the industrial application of the sensor is discussed.
Original language | English |
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Pages (from-to) | 453-457 |
Number of pages | 5 |
Journal | Technical Physics |
Volume | 61 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Mar 2016 |
MoE publication type | A1 Journal article-refereed |