Subsurface damage in polishing-annealing processed ZnO substrates

V. Prozheeva; K. M. Johansen; P. T. Neuvonen; A. Zubiaga; L. Vines; A. Yu Kuznetzov; F. Tuomisto

doi:10.1016/j.mssp.2017.02.021

Subsurface damage in polishing-annealing processed ZnO substrates

V. Prozheeva^*, K. M. Johansen, P. T. Neuvonen, A. Zubiaga, L. Vines, A. Yu Kuznetzov, F. Tuomisto

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200-1500. °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both VZn and VO. Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800°C reduces the concentration of polishing-induced defects below the detection limit.

Original language	English
Pages (from-to)	19-22
Journal	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume	69
DOIs	https://doi.org/10.1016/j.mssp.2017.02.021
Publication status	Published - Oct 2017
MoE publication type	A1 Journal article-refereed

Keywords

Positron annihilation spectroscopy
Secondary ion mass spectrometry
Vacancies
ZnO

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SCI_Prozheeva_Subsurface damage in polishing-annealing processed ZnO substratespdfSubmitted manuscript, 487 KB

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title = "Subsurface damage in polishing-annealing processed ZnO substrates",

abstract = "Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200-1500. °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both VZn and VO. Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800°C reduces the concentration of polishing-induced defects below the detection limit.",

keywords = "Positron annihilation spectroscopy, Secondary ion mass spectrometry, Vacancies, ZnO",

author = "V. Prozheeva and Johansen, {K. M.} and Neuvonen, {P. T.} and A. Zubiaga and L. Vines and Kuznetzov, {A. Yu} and F. Tuomisto",

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AU - Prozheeva, V.

AU - Johansen, K. M.

AU - Neuvonen, P. T.

AU - Zubiaga, A.

AU - Vines, L.

AU - Kuznetzov, A. Yu

AU - Tuomisto, F.

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N2 - Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200-1500. °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both VZn and VO. Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800°C reduces the concentration of polishing-induced defects below the detection limit.

AB - Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200-1500. °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both VZn and VO. Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800°C reduces the concentration of polishing-induced defects below the detection limit.

KW - Positron annihilation spectroscopy

KW - Secondary ion mass spectrometry

KW - Vacancies

KW - ZnO

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M3 - Article

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JO - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ER -

Subsurface damage in polishing-annealing processed ZnO substrates

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