Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

C. Medina-Bailon; T. Sadi; M. Nedjalkov; J. Lee; S. Berrada; H. Carrillo-Nunez; V. Georgiev; S. Selberherr; A. Asenov

doi:10.1109/ULIS.2018.8354723

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

C. Medina-Bailon
, T. Sadi
, M. Nedjalkov
, J. Lee
, S. Berrada
, H. Carrillo-Nunez
, V. Georgiev
, S. Selberherr
, A. Asenov

Department of Neuroscience and Biomedical Engineering

University of Glasgow
Vienna University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

8 Citations (Scopus)

176 Downloads (Pure)

Abstract

The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

Original language	English
Title of host publication	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Publisher	IEEE
Pages	1-4
Number of pages	4
Volume	2018-January
ISBN (Electronic)	9781538648117
DOIs	https://doi.org/10.1109/ULIS.2018.8354723
Publication status	Published - 3 May 2018
MoE publication type	A4 Conference publication
Event	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - Granada, Spain Duration: 19 Mar 2018 → 21 Mar 2018

Conference

Conference	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Abbreviated title	EUROSOI-ULIS
Country/Territory	Spain
City	Granada
Period	19/03/2018 → 21/03/2018

Keywords

Impurity Scattering
Kubo-Greenwood Formalism
Matthiessen rule
Nanowire FETs
Phonon Scattering

Access to Document

10.1109/ULIS.2018.8354723

SCI_Medina_Bailon_Study_EUROSOI_ULIS_2018_CMedinaBailonAccepted author manuscript, 1.68 MB

Cite this

Medina-Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., & Asenov, A. (2018). Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 (Vol. 2018-January, pp. 1-4). IEEE. https://doi.org/10.1109/ULIS.2018.8354723

@inproceedings{8c55301c376d4f5788958615389fb27c,

title = "Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors",

abstract = "The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schr{\"o}dinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.",

keywords = "Impurity Scattering, Kubo-Greenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering",

author = "C. Medina-Bailon and T. Sadi and M. Nedjalkov and J. Lee and S. Berrada and H. Carrillo-Nunez and V. Georgiev and S. Selberherr and A. Asenov",

year = "2018",

month = may,

day = "3",

doi = "10.1109/ULIS.2018.8354723",

language = "English",

volume = "2018-January",

pages = "1--4",

booktitle = "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018",

publisher = "IEEE",

address = "United States",

note = "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS ; Conference date: 19-03-2018 Through 21-03-2018",

}

Medina-Bailon, C, Sadi, T, Nedjalkov, M, Lee, J, Berrada, S, Carrillo-Nunez, H, Georgiev, V, Selberherr, S & Asenov, A 2018, Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. vol. 2018-January, IEEE, pp. 1-4, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Granada, Spain, 19/03/2018. https://doi.org/10.1109/ULIS.2018.8354723

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. / Medina-Bailon, C.; Sadi, T.; Nedjalkov, M. et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. Vol. 2018-January IEEE, 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

AU - Medina-Bailon, C.

AU - Sadi, T.

AU - Nedjalkov, M.

AU - Lee, J.

AU - Berrada, S.

AU - Carrillo-Nunez, H.

AU - Georgiev, V.

AU - Selberherr, S.

AU - Asenov, A.

PY - 2018/5/3

Y1 - 2018/5/3

N2 - The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

AB - The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

KW - Impurity Scattering

KW - Kubo-Greenwood Formalism

KW - Matthiessen rule

KW - Nanowire FETs

KW - Phonon Scattering

UR - https://www.scopus.com/pages/publications/85050942677

U2 - 10.1109/ULIS.2018.8354723

DO - 10.1109/ULIS.2018.8354723

M3 - Conference article in proceedings

AN - SCOPUS:85050942677

VL - 2018-January

SP - 1

EP - 4

BT - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

PB - IEEE

T2 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Y2 - 19 March 2018 through 21 March 2018

ER -

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

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Keywords

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