Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

A. A. Lebedev, V. Y. Davydov, D. Y. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskiy, A. G. Rybkin, S. N. Novikov, Yu N. Makarov

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Abstract

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1-10 ng/mL and bovine serum albumin- fluorescein conjugate on a level of 1-5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

Original languageEnglish
Article number012007
JournalJournal of Physics: Conference Series
Volume951
Issue number1
DOIs
Publication statusPublished - 30 Jan 2018
MoE publication typeA4 Article in a conference publication
EventInternational Conference Modern Nanotechnologies and Nanophotonics for Science and Industry - Suzdal, Russian Federation
Duration: 9 Nov 201713 Nov 2017
Conference number: 6

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