Study of indium-implanted GaAs: positron annihilation and electrical measurements

Research output: Working paper › Professional

Original language	English
Pages	305-
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Name	Materials Science Forum

Keywords

@techreport{04327bf8ca3143ba991e5ebdec8d8048,

title = "Study of indium-implanted GaAs: positron annihilation and electrical measurements",

keywords = "defect, doping, positron annihilation, defect, doping, positron annihilation, defect, doping, positron annihilation",

author = "W. Pfeiffer and L. Liszkay and A. Burchard and M. Deicher and C. Ronning and R. Magerle and K. Saarinen and P. Hautoj{\"a}rvi",

year = "1994",

language = "English",

series = "Materials Science Forum",

pages = "305--",

type = "WorkingPaper",

}

TY - UNPB

T1 - Study of indium-implanted GaAs: positron annihilation and electrical measurements

AU - Pfeiffer, W.

AU - Liszkay, L.

AU - Burchard, A.

AU - Deicher, M.

AU - Ronning, C.

AU - Magerle, R.

AU - Saarinen, K.

AU - Hautojärvi, P.

PY - 1994

Y1 - 1994

KW - defect

KW - doping

KW - positron annihilation

KW - defect

KW - doping

KW - positron annihilation

KW - defect

KW - doping

KW - positron annihilation

M3 - Working paper

T3 - Materials Science Forum

SP - 305-

BT - Study of indium-implanted GaAs: positron annihilation and electrical measurements

ER -