Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low field transverse electroreflectance

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Research units

  • University of Sheffield


We have employed the transverse electroreflectance technique to characterize multiple quantum well structures. A weak modulating electric field (1-100 V/cm) was applied transversally to the probe light beam, i.e., parallel to the quantum well layers. Photoreflectance and in-plane photoconductivity spectra can also be measured with this configuration. The transition energies measured were closely the same as those obtained from the photoreflectance and Schottky barrier electroreflectance spectra. The method can be applied for relatively highly resistive undoped layers grown on semi-insulating substrates. The modulation mechanism in transverse electroreflectance is not well understood.


Original languageEnglish
Title of host publicationModulation Spectroscopy
EditorsFred H. Pollak, Manuel Cardona, David E. Aspnes
Publication statusPublished - 1 Aug 1990
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Modulation Spectroscopy - San Diego, United States
Duration: 19 Mar 199021 Mar 1990

Publication series

NameSPIE Proceedings


ConferenceInternational Conference on Modulation Spectroscopy
CountryUnited States
CitySan Diego

ID: 5536676