Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy

Angelika Polity; R. Krause-Rehberg; T.E.M. Staab; M.J. Puska; J. Klais; H.J. Möller; B.K. Meyer

doi:10.1063/1.366703

Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy

Angelika Polity, R. Krause-Rehberg, T.E.M. Staab, M.J. Puska, J. Klais, H.J. Möller, B.K. Meyer

Department of Applied Physics

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Abstract

CuInSe2 was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental value. In addition, the defect-related lifetimes for mono-, di-, and trivacancies are theoretically determined. An increased average positron lifetime indicated after electron irradiation the appearance of open-volume defects, most probably of divacancy type. The disappearance of this defect was observed during annealing below 250 K. Other defects were formed leading to a divacancy signal at least stable up to 600 K in the temperature range above 450 K.

Original language	English
Pages (from-to)	71-78
Number of pages	8
Journal	Journal of Applied Physics
Volume	83
Issue number	1
DOIs	https://doi.org/10.1063/1.366703
Publication status	Published - 1998
MoE publication type	A1 Journal article-refereed

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title = "Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy",

abstract = "CuInSe2 was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental value. In addition, the defect-related lifetimes for mono-, di-, and trivacancies are theoretically determined. An increased average positron lifetime indicated after electron irradiation the appearance of open-volume defects, most probably of divacancy type. The disappearance of this defect was observed during annealing below 250 K. Other defects were formed leading to a divacancy signal at least stable up to 600 K in the temperature range above 450 K.",

author = "Angelika Polity and R. Krause-Rehberg and T.E.M. Staab and M.J. Puska and J. Klais and H.J. M{\"o}ller and B.K. Meyer",

year = "1998",

doi = "10.1063/1.366703",

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T1 - Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy

AU - Polity, Angelika

AU - Krause-Rehberg, R.

AU - Staab, T.E.M.

AU - Puska, M.J.

AU - Klais, J.

AU - Möller, H.J.

AU - Meyer, B.K.

PY - 1998

Y1 - 1998

N2 - CuInSe2 was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental value. In addition, the defect-related lifetimes for mono-, di-, and trivacancies are theoretically determined. An increased average positron lifetime indicated after electron irradiation the appearance of open-volume defects, most probably of divacancy type. The disappearance of this defect was observed during annealing below 250 K. Other defects were formed leading to a divacancy signal at least stable up to 600 K in the temperature range above 450 K.

AB - CuInSe2 was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental value. In addition, the defect-related lifetimes for mono-, di-, and trivacancies are theoretically determined. An increased average positron lifetime indicated after electron irradiation the appearance of open-volume defects, most probably of divacancy type. The disappearance of this defect was observed during annealing below 250 K. Other defects were formed leading to a divacancy signal at least stable up to 600 K in the temperature range above 450 K.

U2 - 10.1063/1.366703

DO - 10.1063/1.366703

M3 - Article

SN - 0021-8979

VL - 83

SP - 71

EP - 78

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy

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