Study of Defects Generated by Standard- and Plasma- Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Research output: Contribution to journalArticle

Researchers

  • L. Ottaviani
  • M. Kazan
  • S. Biondo
  • Filip Tuomisto

  • F. Milesi
  • J. Duchaine
  • F. Torregrosa
  • O. Palais

Research units

  • Aix-Marseille Université
  • American University of Beirut
  • CEA
  • Ion Beam Services

Details

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalMaterials Science Forum
Volume725
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

    Research areas

  • implantation, positron, SiC

ID: 941760