Study of Defects Generated by Standard- and Plasma- Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

L. Ottaviani, M. Kazan, S. Biondo, F. Tuomisto, F. Milesi, J. Duchaine, F. Torregrosa, O. Palais

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed


  • implantation
  • positron
  • SiC

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