| Original language | English |
|---|---|
| Pages (from-to) | 41-44 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 725 |
| DOIs | |
| Publication status | Published - 2012 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- implantation
- positron
- SiC
Study of Defects Generated by Standard- and Plasma- Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
L. Ottaviani, M. Kazan, S. Biondo, F. Tuomisto, F. Milesi, J. Duchaine, F. Torregrosa, O. Palais
Research output: Contribution to journal › Article › Scientific › peer-review
1
Citation
(Scopus)