Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding

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Abstract

The Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature wafer-level bonds. The experiments were carried out across a range of temperatures and the results cover optimized wafer-level bonding process, the formation of the bond microstructure, mechanical performance, as well as the effects of thermal aging.

Original languageEnglish
Title of host publicationProceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020
PublisherIEEE
Number of pages5
ISBN (Electronic)9781728162928
DOIs
Publication statusPublished - 15 Sept 2020
MoE publication typeA4 Conference publication
EventElectronics System-Integration Technology Conference - Virtual conference, Tonsberg, Vestfold, Norway
Duration: 15 Sept 202018 Sept 2020
Conference number: 8

Conference

ConferenceElectronics System-Integration Technology Conference
Abbreviated titleESTC
Country/TerritoryNorway
CityTonsberg, Vestfold
Period15/09/202018/09/2020
OtherVirtual conference

Funding

This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 826588. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and Belgium, Germany, Netherlands, Finland, Austria, France, Hungary, Latvia, Norway, Switzerland, Israel. The authors would also like to acknowledge the Innovation Funding Agency Business Finland (formerly Tekes) for financial support. The authors acknowledge the provision of facilities as well as technical support by Aalto University at OtaNano - Nanomicroscopy Center (Aalto-NMC). The Authors would like to acknowledge Okmetic for the Si wafers and to OtaNano for therpvisoionfoc ilitiefsanadtechnical support.

Keywords

  • Copper
  • Indium
  • Tin

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