Study Of 1/f Noise Characteristics In Cu/n-GaN Schottky Barrier Diode

Manjari Garg*, Ashutosh Kumar, Nagarajan Subramaniyam, M. Sopanen, R. Singh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

The 1/f noise characteristics of Cu/n-GaN Schottky barrier diode in the forward bias region have been studied. Temperature dependent 1/f noise measurements were performed over a wide range of temperature from 100 to 320K and frequency range of 1 to 100 Hz. The noise spectra exhibited frequency dependence proportional with 1/f. implying that flicker noise is dominant. Current dependence of noise was analyzed in order to fix the diode current such that the noise may be determined by the Schottky barrier alone without the contribution from the series resistance. It was observed that the spectral power density of current noise SI was nearly independent of temperature. This behavior has been attributed to the modulation of the charge density by multi step tunneling process within the space charge region of the semiconductor.

Original languageEnglish
Title of host publicationDAE SOLID STATE PHYSICS SYMPOSIUM 2015
EditorsR Chitra, S Bhattacharya, NK Sahoo
Number of pages3
ISBN (Electronic)978-0-7354-1378-8
DOIs
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventDAE Solid State Physics Symposium - Uttar Pradesh, India
Duration: 21 Dec 201525 Dec 2015
Conference number: 60

Publication series

NameAIP Conference Proceedings
PublisherAMER INST PHYSICS
Volume1731
ISSN (Print)0094-243X

Conference

ConferenceDAE Solid State Physics Symposium
Country/TerritoryIndia
CityUttar Pradesh
Period21/12/201525/12/2015

Keywords

  • GaN
  • Cu/GaN Schottky barrier diode
  • 1/f Noise

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