Structural Properties of Ge Implanted Si(1-x)Ge(x) Layers

Z. Xia, E.O. Ristolainen, H. Ronkainen, J. Saarilahti, K. Grahn, J. Molarius

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	4th European Vacuum Conference, 13-17 June, 1994, Uppsala
Publication status	Published - 1994
MoE publication type	A4 Article in a conference publication

Keywords

@inproceedings{39766b7f318b45bbbdfa1e93d5632e82,

title = "Structural Properties of Ge Implanted Si(1-x)Ge(x) Layers",

keywords = "ion implatation, SIMS, ion implatation, SIMS, ion implatation, SIMS",

author = "Z. Xia and E.O. Ristolainen and H. Ronkainen and J. Saarilahti and K. Grahn and J. Molarius",

year = "1994",

language = "English",

booktitle = "4th European Vacuum Conference, 13-17 June, 1994, Uppsala",

}

TY - GEN

T1 - Structural Properties of Ge Implanted Si(1-x)Ge(x) Layers

AU - Xia, Z.

AU - Ristolainen, E.O.

AU - Ronkainen, H.

AU - Saarilahti, J.

AU - Grahn, K.

AU - Molarius, J.

PY - 1994

Y1 - 1994

KW - ion implatation

KW - SIMS

KW - ion implatation

KW - SIMS

KW - ion implatation

KW - SIMS

M3 - Conference contribution

BT - 4th European Vacuum Conference, 13-17 June, 1994, Uppsala

ER -