Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

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Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications. / Prabakaran, K.; Jayasakthi, M.; Surender, S.; Pradeep, S.; Sanjay, S.; Ramesh, Raju; Balaji, M.; Gautier, Nicolas; Baskar, K.

In: Applied Surface Science, Vol. 476, 15.05.2019, p. 993-999.

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Prabakaran, K. ; Jayasakthi, M. ; Surender, S. ; Pradeep, S. ; Sanjay, S. ; Ramesh, Raju ; Balaji, M. ; Gautier, Nicolas ; Baskar, K. / Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications. In: Applied Surface Science. 2019 ; Vol. 476. pp. 993-999.

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@article{751dee42bbba4331b0cb8d8b93294a2f,
title = "Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications",
abstract = "InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16–18{\%} using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.",
keywords = "InGaN, Multiple quantum well, Photoluminescence, V-pits, Nanostructures",
author = "K. Prabakaran and M. Jayasakthi and S. Surender and S. Pradeep and S. Sanjay and Raju Ramesh and M. Balaji and Nicolas Gautier and K. Baskar",
year = "2019",
month = "5",
day = "15",
doi = "10.1016/j.apsusc.2019.01.156",
language = "English",
volume = "476",
pages = "993--999",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier Science B.V.",

}

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TY - JOUR

T1 - Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

AU - Prabakaran, K.

AU - Jayasakthi, M.

AU - Surender, S.

AU - Pradeep, S.

AU - Sanjay, S.

AU - Ramesh, Raju

AU - Balaji, M.

AU - Gautier, Nicolas

AU - Baskar, K.

PY - 2019/5/15

Y1 - 2019/5/15

N2 - InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16–18% using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.

AB - InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16–18% using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.

KW - InGaN

KW - Multiple quantum well

KW - Photoluminescence

KW - V-pits

KW - Nanostructures

UR - http://www.scopus.com/inward/record.url?scp=85060717251&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.01.156

DO - 10.1016/j.apsusc.2019.01.156

M3 - Article

VL - 476

SP - 993

EP - 999

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 31555450