Structural, electrical and optical properties of defects in Si-doped GaN grown by molecular beam epitaxy on HVPE GaN

P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, J. Keränen

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalJournal of Applied Physics
Volume92
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Keywords

  • GaN
  • positron

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