Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Jaakko Niinistö, Matti Putkonen, Lauri Niinistö

    Research output: Contribution to journalArticleScientificpeer-review

    65 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)84-91
    JournalJournal of Applied Physics
    Volume95
    Issue number1
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed

    Keywords

    • atomic layer deposition
    • cyclopentadienyl precursor
    • high-k dielectrics

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