Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate

L. Karvonen, Antti Säynätjoki, V. Dhaka, T. Haggren, S. Honkanen, S. Mehravar, R. Norwood, N. Peyghambarian, H. Lipsanen, K. Kieu

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference
PublisherIEEE
Number of pages1
ISBN (Print)978-1-4799-0593-5
DOIs
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
EventConference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference - Munich, Germany
Duration: 12 May 201316 May 2013

Conference

ConferenceConference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference
Abbreviated titleCLEO/Europe-IQEC
CountryGermany
CityMunich
Period12/05/201316/05/2013

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