Abstract
Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).
Original language | English |
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Title of host publication | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference |
Publisher | IEEE |
Number of pages | 1 |
ISBN (Print) | 978-1-4799-0593-5 |
DOIs | |
Publication status | Published - 2013 |
MoE publication type | A4 Conference publication |
Event | Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference - Munich, Germany Duration: 12 May 2013 → 16 May 2013 |
Conference
Conference | Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference |
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Abbreviated title | CLEO/Europe-IQEC |
Country/Territory | Germany |
City | Munich |
Period | 12/05/2013 → 16/05/2013 |