Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

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Stress distribution of GaN layer grown on micro-pillar patterned GaN templates. / Subramaniyam, Nagarajan; Svensk, Olli; Ali, Muhammad; Naresh-Kumar, Gunasekar; Trager-Cowan, Carol; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri.

In: Applied Physics Letters, Vol. 103, No. 1, 012102, 2013, p. 1-4.

Research output: Contribution to journalArticleScientificpeer-review

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Subramaniyam N, Svensk O, Ali M, Naresh-Kumar G, Trager-Cowan C, Suihkonen S et al. Stress distribution of GaN layer grown on micro-pillar patterned GaN templates. Applied Physics Letters. 2013;103(1):1-4. 012102. https://doi.org/10.1063/1.4813077

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Subramaniyam, Nagarajan ; Svensk, Olli ; Ali, Muhammad ; Naresh-Kumar, Gunasekar ; Trager-Cowan, Carol ; Suihkonen, Sami ; Sopanen, Markku ; Lipsanen, Harri. / Stress distribution of GaN layer grown on micro-pillar patterned GaN templates. In: Applied Physics Letters. 2013 ; Vol. 103, No. 1. pp. 1-4.

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@article{b686d2579e2448a1ae7138811303d8c4,
title = "Stress distribution of GaN layer grown on micro-pillar patterned GaN templates",
abstract = "High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.",
keywords = "dislocations, electron channeling, GaN, Raman mapping, stress, dislocations, electron channeling, GaN, Raman mapping, stress, dislocations, electron channeling, GaN, Raman mapping, stress",
author = "Nagarajan Subramaniyam and Olli Svensk and Muhammad Ali and Gunasekar Naresh-Kumar and Carol Trager-Cowan and Sami Suihkonen and Markku Sopanen and Harri Lipsanen",
year = "2013",
doi = "10.1063/1.4813077",
language = "English",
volume = "103",
pages = "1--4",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "1",

}

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TY - JOUR

T1 - Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

AU - Subramaniyam, Nagarajan

AU - Svensk, Olli

AU - Ali, Muhammad

AU - Naresh-Kumar, Gunasekar

AU - Trager-Cowan, Carol

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2013

Y1 - 2013

N2 - High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

AB - High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

KW - dislocations

KW - electron channeling

KW - GaN

KW - Raman mapping

KW - stress

KW - dislocations

KW - electron channeling

KW - GaN

KW - Raman mapping

KW - stress

KW - dislocations

KW - electron channeling

KW - GaN

KW - Raman mapping

KW - stress

U2 - 10.1063/1.4813077

DO - 10.1063/1.4813077

M3 - Article

VL - 103

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 012102

ER -

ID: 723052