Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

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Researchers

Research units

  • University of Strathclyde

Abstract

High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

Details

Original languageEnglish
Article number012102
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number1
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

    Research areas

  • dislocations, electron channeling, GaN, Raman mapping, stress

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