Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high resolution micro-Raman spectroscopy

W.M. Chen, G.D.M. Dilliway, P.J. McNally, T. Tuomi, A. Willoughby, J. Bonar

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)307-312
    JournalJournal of Materials Science: Materials in Electronics
    Issue number14
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Raman spectrometry
    • silicon-germanium aloy
    • Strain

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