@article{ab3c8221ab8e4605a92566f3cde5bac1,
title = "Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high resolution micro-Raman spectroscopy",
keywords = "Raman spectrometry, silicon-germanium aloy, Strain, Raman spectrometry, silicon-germanium aloy, Strain, Raman spectrometry, silicon-germanium aloy, Strain",
author = "W.M. Chen and G.D.M. Dilliway and P.J. McNally and T. Tuomi and A. Willoughby and J. Bonar",
year = "2003",
language = "English",
pages = "307--312",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "14",
}