Stress characterization of device layers and the underlying Si1-xGex virtual substrate with x-ray topography and high resolution micro-raman spectroscopy

W.M. Chen, G.D.M. Dilliway, P.J. McNally, T. Tuomi, A.F.W. Willoughby, J. Bonar, L. Knuuttila, J. Riikonen, J. Toivonen

    Research output: Working paperProfessional

    Original languageEnglish
    Publication statusPublished - 2003
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB User's Meeting 2003, Janyary 31, 2003, Hamburg, Germany


    • Raman spectrometry
    • silicon-germanium alloy
    • strain
    • synchrotron x-ray topography

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