Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high resolution micro-Raman spectroscopy

Research output: Contribution to journalArticle

Researchers

  • W.M. Chen
  • G.D.M. Dilliway
  • P.J. McNally
  • T. Tuomi
  • A. Willoughby
  • J. Bonar

Research units

Details

Original languageEnglish
Pages (from-to)307-312
JournalJournal of Materials Science: Materials in Electronics
Issue number14
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

    Research areas

  • Raman spectrometry, silicon-germanium aloy, Strain

ID: 4152635