Strain-induced quantum dots by self-organized stressors

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

Novel in situ method to produce quantum dots is reported. Three‐dimensional confinement of carriers to a GaInAs/GaAs quantum well dots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self‐organizing growth of InP nanoscale islands on top barrier GaAs surface. Two transitions arising from the strain‐induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed.

Details

Original languageEnglish
Pages (from-to)2364-2366
Number of pages3
JournalApplied Physics Letters
Volume66
Issue number18
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

    Research areas

  • quantum dots, semiconductors

ID: 4967460