Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells

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Original languageEnglish
Article number165103
Pages (from-to)1-6
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume46
Issue number16
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

ID: 960682