Strain robust spin gapless semiconductors/half-metals in transition metal embedded MoSe2monolayer

Qiang Yang, Liangzhi Kou, Xiaohui Hu, Xiaohui Hu, Yifeng Wang, Yifeng Wang, Chunhua Lu, Arkady V. Krasheninnikov, Litao Sun

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

The realization of spin gapless semiconductor (SGS) and half-metal (HM) behavior in two-dimensional (2D) transition metal (TM) dichalcogenides is highly desirable for their applications in spintronic devices. Here, using density functional theory calculations, we demonstrate that Fe, Co, Ni substitutional impurities can not only induce magnetism in MoSe2 monolayer, but also convert the semiconducting MoSe2 to SGS/HM system. We also study the effects of mechanical strain on the electronic and magnetic properties of the doped monolayer. We show that for all TM impurities we considered, the system exhibits the robust SGS/HM behavior regardless of biaxial strain values. Moreover, it is found that the magnetic properties of TM-MoSe2 can effectively be tuned under biaxial strain by controlling the spin polarization of the 3d orbitals of Fe, Co, Ni atoms. Our findings offer a new route to designing the SGS/HM properties and modulating magnetic characteristics of the TM-MoSe2 system and may also facilitate the implementation of SGS/HM behavior and realization of spintronic devices based on other 2D materials.

Original languageEnglish
Article number365305
Pages (from-to)1-8
Number of pages8
JournalJournal of Physics Condensed Matter
Volume32
Issue number36
DOIs
Publication statusPublished - 26 Aug 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • half-metals
  • spin gapless semiconductor
  • strain engineering
  • Transition metal dichalcogenides

Fingerprint

Dive into the research topics of 'Strain robust spin gapless semiconductors/half-metals in transition metal embedded MoSe<sub>2</sub>monolayer'. Together they form a unique fingerprint.

Cite this