Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

Masaki Fujikane; Toshiya Yokogawa; Shijo Nagao; Roman Nowak

doi:10.7567/JJAP.52.08JJ01

Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

Masaki Fujikane
, Toshiya Yokogawa
, Shijo Nagao
, Roman Nowak

Department of Chemistry and Materials Science

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Original language	English
Article number	08JJ01
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	8S
DOIs	https://doi.org/10.7567/JJAP.52.08JJ01
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

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10.7567/JJAP.52.08JJ01

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title = "Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal",

author = "Masaki Fujikane and Toshiya Yokogawa and Shijo Nagao and Roman Nowak",

year = "2013",

doi = "10.7567/JJAP.52.08JJ01",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

AU - Fujikane, Masaki

AU - Yokogawa, Toshiya

AU - Nagao, Shijo

AU - Nowak, Roman

PY - 2013

Y1 - 2013

UR - http://dx.doi.org/10.7567/JJAP.52.08JJ01

U2 - 10.7567/JJAP.52.08JJ01

DO - 10.7567/JJAP.52.08JJ01

M3 - Article

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8S

M1 - 08JJ01

ER -

Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

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Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

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