Strain distribution and carrier confinement in si/sio2 quantum point contacts and wires.

F. Boxberg, R. Virkkala, J. Tulkki

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)600
    JournalJournal of Applied Physics
    Volume88
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

    Keywords

    • band deformation
    • oxidation-induced strain
    • quantum point contact
    • quantum wire and strain
    • silicon

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