STM topography and manipulation of single Au atoms on Si(100),

F. Chiaravalloti, D. Riedel, G. Dujardin, H. P. Pinto, A. S. Foster

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)
12 Downloads (Pure)

Abstract

The low-temperature (12 K) adsorption of single Au atoms on Si(100) is studied by scanning tunneling microscopy (STM). Comparison between experimental and calculated STM topographies as well as density-functional-theory calculations of the adsorption energies enable us to identify two adsorption configurations of Au atoms between Si-dimer rows (BDRs) and on top of Si-dimer rows (TDRs). In both adsorption configurations, the Au atoms are covalently bound to two Si atoms through a partial electron transfer from Si to Au. STM manipulation confirms that the TDR adsorption configuration is metastable, whereas the BDR one is the most stable configuration.
Original languageEnglish
Article number245431
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Volume79
Issue number24
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Keywords

  • adsorption
  • gold
  • scanning tunnelling microscopy,

Fingerprint

Dive into the research topics of 'STM topography and manipulation of single Au atoms on Si(100),'. Together they form a unique fingerprint.

Cite this