Stacking faults in 4H SiC pn-diodes created during forward voltage operating conditions

J.P. Bergman, H. Lendemann, H. Jacobsson, E. Janzén, Turkka Tuomi

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationMat. Res. Soc. 2000
    Pages201-202
    Publication statusPublished - 2000
    MoE publication typeA4 Article in a conference publication

    Keywords

    • diodes
    • silicon carbide
    • stacking faults
    • synchrotron x-ray topography

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