Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P

Research output: Contribution to journalArticleScientificpeer-review

Standard

Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P. / Kilpeläinen, S.; Kuitunen, K.; Tuomisto, F.; Slotte, J.; Radamson, H.H.; Kuznetsov, A.Yu.

In: Physical Review B, Vol. 81, No. 13, 132103, 04.2010, p. 1-4.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

APA

Vancouver

Author

Kilpeläinen, S. ; Kuitunen, K. ; Tuomisto, F. ; Slotte, J. ; Radamson, H.H. ; Kuznetsov, A.Yu. / Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P. In: Physical Review B. 2010 ; Vol. 81, No. 13. pp. 1-4.

Bibtex - Download

@article{ab92693f224e4b72830c1f8c9ea7230a,
title = "Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P",
abstract = "Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−xGex with Ge contents of 10{\%}, 20{\%}, and 30{\%} in the range of 250–350 °C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4±0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium (V-P-Ge) complex.",
keywords = "distribution, E-center, positron, SiGe, distribution, E-center, positron, SiGe, distribution, E-center, positron, SiGe",
author = "S. Kilpel{\"a}inen and K. Kuitunen and F. Tuomisto and J. Slotte and H.H. Radamson and A.Yu. Kuznetsov",
year = "2010",
month = "4",
doi = "10.1103/PhysRevB.81.132103",
language = "English",
volume = "81",
pages = "1--4",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "2469-9950",
publisher = "American Physical Society",
number = "13",

}

RIS - Download

TY - JOUR

T1 - Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P

AU - Kilpeläinen, S.

AU - Kuitunen, K.

AU - Tuomisto, F.

AU - Slotte, J.

AU - Radamson, H.H.

AU - Kuznetsov, A.Yu.

PY - 2010/4

Y1 - 2010/4

N2 - Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−xGex with Ge contents of 10%, 20%, and 30% in the range of 250–350 °C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4±0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium (V-P-Ge) complex.

AB - Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−xGex with Ge contents of 10%, 20%, and 30% in the range of 250–350 °C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4±0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium (V-P-Ge) complex.

KW - distribution

KW - E-center

KW - positron

KW - SiGe

KW - distribution

KW - E-center

KW - positron

KW - SiGe

KW - distribution

KW - E-center

KW - positron

KW - SiGe

U2 - 10.1103/PhysRevB.81.132103

DO - 10.1103/PhysRevB.81.132103

M3 - Article

VL - 81

SP - 1

EP - 4

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 13

M1 - 132103

ER -

ID: 714356