STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

H. P. Joosten; H. J. M. F.  Noteborn; Kimmo Kaski; D. Lenstra

doi:10.1016/0749-6036(92)90219-U

STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

H. P. Joosten
, H. J. M. F. Noteborn
, Kimmo Kaski
, D. Lenstra

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

Double-barrier resonant-tunneling (DBRT) devices belong to a novel class of nanometer scale electronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to intrinsic bistability and hysteresis. To analyze the dynamical stability of such devices, a simple set of equations is derived from an extension of the static theory. This extension results in a model for the dynamics which cannot be linearized around a point of operation. Numerically the stability of a DBRT-structure is investigated. This non-linearizable model is compared with an earlier, more simple, linearizable model.

Original language	English
Pages (from-to)	53-56
Journal	Superlattices and Microstructures
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(92)90219-U
Publication status	Published - 1992
MoE publication type	A1 Journal article-refereed

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title = "STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE",

abstract = "Double-barrier resonant-tunneling (DBRT) devices belong to a novel class of nanometer scale electronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to intrinsic bistability and hysteresis. To analyze the dynamical stability of such devices, a simple set of equations is derived from an extension of the static theory. This extension results in a model for the dynamics which cannot be linearized around a point of operation. Numerically the stability of a DBRT-structure is investigated. This non-linearizable model is compared with an earlier, more simple, linearizable model.",

author = "Joosten, \{H. P.\} and Noteborn, \{H. J. M. F.\} and Kimmo Kaski and D. Lenstra",

year = "1992",

doi = "10.1016/0749-6036(92)90219-U",

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T1 - STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

AU - Joosten, H. P.

AU - Noteborn, H. J. M. F.

AU - Kaski, Kimmo

AU - Lenstra, D.

PY - 1992

Y1 - 1992

N2 - Double-barrier resonant-tunneling (DBRT) devices belong to a novel class of nanometer scale electronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to intrinsic bistability and hysteresis. To analyze the dynamical stability of such devices, a simple set of equations is derived from an extension of the static theory. This extension results in a model for the dynamics which cannot be linearized around a point of operation. Numerically the stability of a DBRT-structure is investigated. This non-linearizable model is compared with an earlier, more simple, linearizable model.

AB - Double-barrier resonant-tunneling (DBRT) devices belong to a novel class of nanometer scale electronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to intrinsic bistability and hysteresis. To analyze the dynamical stability of such devices, a simple set of equations is derived from an extension of the static theory. This extension results in a model for the dynamics which cannot be linearized around a point of operation. Numerically the stability of a DBRT-structure is investigated. This non-linearizable model is compared with an earlier, more simple, linearizable model.

U2 - 10.1016/0749-6036(92)90219-U

DO - 10.1016/0749-6036(92)90219-U

M3 - Article

SN - 0749-6036

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SP - 53

EP - 56

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

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