STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

H. P. Joosten, H. J. M. F. Noteborn, Kimmo Kaski, D. Lenstra

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Double-barrier resonant-tunneling (DBRT) devices belong to a novel class of nanometer scale electronic devices with great potential applications. In these devices, the self-consistent buildup of charge due to resonant carriers in the well may lead to intrinsic bistability and hysteresis. To analyze the dynamical stability of such devices, a simple set of equations is derived from an extension of the static theory. This extension results in a model for the dynamics which cannot be linearized around a point of operation. Numerically the stability of a DBRT-structure is investigated. This non-linearizable model is compared with an earlier, more simple, linearizable model.
Original languageEnglish
Pages (from-to)53-56
JournalSuperlattices and Microstructures
Volume12
Issue number1
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE'. Together they form a unique fingerprint.

Cite this