Stability and crystallization of amorphous clusters in crystalline Si

Sebastian Von Alfthan*, Adrian P. Sutton, Antti Kuronen, Kimmo Kaski

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We have simulated using molecular dynamics the thermal stability and crystallization kinetics of nanometre-sized clusters of amorphous Si embedded in crystalline Si, which are of interest for phase-change memory devices. We have calculated the interfacial and bulk excess energies of the amorphous clusters, and studied their crystallization kinetics at 700-1500 K. At temperatures below (above) 1150 K the activation energy is 0.73 ± 0.04 eV (1.52 ± 0.07 eV), indicating a change of mechanism at 1150 K. We predict the stability of much larger amorphous clusters by extrapolating our simulation data using an analytic model.

Original languageEnglish
Pages (from-to)4263-4270
Number of pages8
JournalJournal of physics: Condensed matter
Volume17
Issue number27
DOIs
Publication statusPublished - 13 Jul 2005
MoE publication typeA1 Journal article-refereed

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