Spontaneous and stimulated emission in InAsSb-based LED heterostructures

Research output: Contribution to journalArticleScientificpeer-review


  • K.D. Mynbaev
  • N. L. Bazhenov
  • A. A. Semakova
  • A. V. Chernyaev
  • S. S. Kizhaev
  • N. D. Stoyanov
  • Vladislav E. Bougrov
  • Harri Lipsanen

  • Kh M. Salikhov

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Microsensor Technology
  • Institute of Perspective Researches, Kazan


Electroluminescence of LED heterostructures with active layer made of InAsSb films grown on InAs substrates was studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission was observed with an optical cavity formed normal to the growth plane. The emission became spontaneous at higher temperatures due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole transitioning to the spin-orbit-splitted band. The spontaneous character of emission continued up to room temperature because of the influence of other Auger processes. The results obtained suggest that InAsSb-based LED heterostructures are promising for the fabrication of vertically-emitting mid-infrared lasers.


Original languageEnglish
Pages (from-to)246-250
Number of pages5
Publication statusPublished - 1 Sep 2017
MoE publication typeA1 Journal article-refereed

    Research areas

  • Carrier recombination, Electroluminescence, InAsSb

ID: 14526159