Spontaneous and stimulated emission in InAsSb-based LED heterostructures

K.D. Mynbaev, N. L. Bazhenov, A. A. Semakova, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, Vladislav E. Bougrov, H. Lipsanen, Kh M. Salikhov

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)


Electroluminescence of LED heterostructures with active layer made of InAsSb films grown on InAs substrates was studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission was observed with an optical cavity formed normal to the growth plane. The emission became spontaneous at higher temperatures due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole transitioning to the spin-orbit-splitted band. The spontaneous character of emission continued up to room temperature because of the influence of other Auger processes. The results obtained suggest that InAsSb-based LED heterostructures are promising for the fabrication of vertically-emitting mid-infrared lasers.

Original languageEnglish
Pages (from-to)246-250
Number of pages5
Publication statusPublished - 1 Sep 2017
MoE publication typeA1 Journal article-refereed


  • Carrier recombination
  • Electroluminescence
  • InAsSb


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