Split Ga vacancies in n -type and semi-insulating β -Ga2O3single crystals

A. Karjalainen*, I. Makkonen, J. Etula, K. Goto, H. Murakami, Y. Kumagai, F. Tuomisto

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

We report a positron annihilation study using state-of-the-art experimental and theoretical methods in n-type and semi-insulating β - Ga 2 O 3. We utilize the recently discovered unusually strong Doppler broadening signal anisotropy of β - Ga 2 O 3 in orientation-dependent Doppler broadening measurements, complemented by temperature-dependent positron lifetime experiments and first principles calculations of positron-electron annihilation signals. We find that split Ga vacancies dominate the positron trapping in β - Ga 2 O 3 single crystals irrespective of the type of dopant or conductivity, implying concentrations of at least 1 × 1 0 18 c m - 3.

Original languageEnglish
Article number072104
Number of pages5
JournalApplied Physics Letters
Volume118
Issue number7
DOIs
Publication statusPublished - 15 Feb 2021
MoE publication typeA1 Journal article-refereed

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