Spin-Dependent Transport in Heavily Mn-Doped GaAs II; Effect of Collisional Broadening

Pekka Kuivalainen; Natalia Lebedeva

Spin-Dependent Transport in Heavily Mn-Doped GaAs II; Effect of Collisional Broadening

Department of Electrical Engineering and Automation

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Pages (from-to)	512-518
Journal	Physica Status Solidi
Volume	231
Issue number	2
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

magnetic semiconductors
transport properties

Cite this

@article{113b033c097d43468b66917fd26864cf,

title = "Spin-Dependent Transport in Heavily Mn-Doped GaAs II; Effect of Collisional Broadening",

keywords = "magnetic semiconductors, transport properties, magnetic semiconductors, transport properties, magnetic semiconductors, transport properties",

author = "Pekka Kuivalainen and Natalia Lebedeva",

year = "2002",

language = "English",

volume = "231",

pages = "512--518",

journal = "Physica Status Solidi",

number = "2",

}

TY - JOUR

T1 - Spin-Dependent Transport in Heavily Mn-Doped GaAs II; Effect of Collisional Broadening

AU - Kuivalainen, Pekka

AU - Lebedeva, Natalia

PY - 2002

Y1 - 2002

KW - magnetic semiconductors

KW - transport properties

KW - magnetic semiconductors

KW - transport properties

KW - magnetic semiconductors

KW - transport properties

M3 - Article

VL - 231

SP - 512

EP - 518

JO - Physica Status Solidi

JF - Physica Status Solidi

IS - 2

ER -