Spin-dependent hot electron transport in Ni81Fe19 and Co84Fe16 films on GaAs(001)

Sebastiaan van Dijken*, Xin Jiang, Stuart S P Parkin

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

75 Citations (Scopus)


Magnetic tunnel transistors are used to study spin-dependent hot electron transport in ferromagnetic Ni81Fe16 and CO84Fe16 films deposited on GaAs(001). For both Ni81Fe19 and CO84Fe16 the attenuation length of majority electrons is found to decrease with energy, whereas the much smaller attenuation length of minority electrons is found to be nearly constant at electron energies between 1.0 and 1.9 eV above the Fermi level. Contrary to the similarities in the bulk, hot electron scattering at the metal/GaAs interface is found to be much stronger at the Ni18Fe19/GaAs(001) interface than at the CO84Fe16/GaAs(001) interface.

Original languageEnglish
Article number094417
Number of pages7
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number9
Publication statusPublished - Sep 2002
MoE publication typeA1 Journal article-refereed

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