Spin-dependent hot electron transport in Ni81Fe19 and Co84Fe16 films on GaAs(001)

Sebastiaan van Dijken; Xin Jiang; Stuart S P Parkin

doi:10.1103/PhysRevB.66.094417

Spin-dependent hot electron transport in Ni₈₁Fe₁₉ and Co₈₄Fe₁₆ films on GaAs(001)

Sebastiaan van Dijken^*, Xin Jiang, Stuart S P Parkin

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

75 Citations (Scopus)

Abstract

Magnetic tunnel transistors are used to study spin-dependent hot electron transport in ferromagnetic Ni₈₁Fe₁₆ and CO₈₄Fe₁₆ films deposited on GaAs(001). For both Ni₈₁Fe₁₉ and CO₈₄Fe₁₆ the attenuation length of majority electrons is found to decrease with energy, whereas the much smaller attenuation length of minority electrons is found to be nearly constant at electron energies between 1.0 and 1.9 eV above the Fermi level. Contrary to the similarities in the bulk, hot electron scattering at the metal/GaAs interface is found to be much stronger at the Ni₁₈Fe₁₉/GaAs(001) interface than at the CO₈₄Fe₁₆/GaAs(001) interface.

Original language	English
Article number	094417
Number of pages	7
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	66
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevB.66.094417
Publication status	Published - Sep 2002
MoE publication type	A1 Journal article-refereed

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title = "Spin-dependent hot electron transport in Ni81Fe19 and Co84Fe16 films on GaAs(001)",

abstract = "Magnetic tunnel transistors are used to study spin-dependent hot electron transport in ferromagnetic Ni81Fe16 and CO84Fe16 films deposited on GaAs(001). For both Ni81Fe19 and CO84Fe16 the attenuation length of majority electrons is found to decrease with energy, whereas the much smaller attenuation length of minority electrons is found to be nearly constant at electron energies between 1.0 and 1.9 eV above the Fermi level. Contrary to the similarities in the bulk, hot electron scattering at the metal/GaAs interface is found to be much stronger at the Ni18Fe19/GaAs(001) interface than at the CO84Fe16/GaAs(001) interface.",

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AB - Magnetic tunnel transistors are used to study spin-dependent hot electron transport in ferromagnetic Ni81Fe16 and CO84Fe16 films deposited on GaAs(001). For both Ni81Fe19 and CO84Fe16 the attenuation length of majority electrons is found to decrease with energy, whereas the much smaller attenuation length of minority electrons is found to be nearly constant at electron energies between 1.0 and 1.9 eV above the Fermi level. Contrary to the similarities in the bulk, hot electron scattering at the metal/GaAs interface is found to be much stronger at the Ni18Fe19/GaAs(001) interface than at the CO84Fe16/GaAs(001) interface.

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