Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

J. Pavlov*, T. Ceponis, L. Deveikis, T. Heikkinen, J. Raisanen, Rumbauskas, G. Tamulaitis, F. Tuomisto, E. Gaubas

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this work, pulsed photoionization as well as photoluminescence and positron annihilation spectroscopy were combined to detect different species of defects. The GaN crystals, grown by the ammono-thermal method, doped with Mn as well as Mg impurities and irradiated with different fluences of reactor neutrons, were examined to clarify the role of the technological and radiation defects. The evolution of the prevailing photoactive centres was examined by pulsed photoionization spectroscopy. Positron annihilation spectroscopy was applied to reveal vacancy-type defects.

Original languageEnglish
Pages (from-to)211-223
Number of pages13
JournalLITHUANIAN JOURNAL OF PHYSICS
Volume59
Issue number4
DOIs
Publication statusPublished - 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • pulsed photoionization spectroscopy
  • photoluminescence
  • positron annihilation spectroscopy
  • GaN
  • defects
  • DISLOCATIONS
  • CRYSTAL
  • GROWTH

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