Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen; Antti Haarahiltunen; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Juha Toivanen; Mikko A. Juntunen

doi:10.1117/12.2649636

Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Juha Toivanen, Mikko A. Juntunen

ElFys Inc.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

33 Downloads (Pure)

Abstract

Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.

Original language	English
Title of host publication	Optical Components and Materials XX
Editors	Shibin Jiang, Michel J. Digonnet
Publisher	SPIE
Number of pages	7
ISBN (Electronic)	978-1-5106-5940-7
ISBN (Print)	978-1-5106-5939-1
DOIs	https://doi.org/10.1117/12.2649636
Publication status	Published - 14 Mar 2023
MoE publication type	A4 Conference publication
Event	Optical Components and Materials - San Francisco, United States Duration: 28 Jan 2023 → 3 Feb 2023 Conference number: 20

Publication series

Name	Proceedings of SPIE : the International Society for Optical Engineering
Publisher	SPIE
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Optical Components and Materials
Country/Territory	United States
City	San Francisco
Period	28/01/2023 → 03/02/2023

Keywords

Black silicon
spatial uniformity
silicon
photodiode

Access to Document

10.1117/12.2649636

1241713Final published version, 2.86 MB

Cite this

Heinonen, J., Haarahiltunen, A., Vähänissi, V., Pasanen, T. P., Savin, H., Toivanen, J., & Juntunen, M. A. (2023). Spatial uniformity of black silicon induced junction photodiode responsivity. In S. Jiang, & M. J. Digonnet (Eds.), Optical Components and Materials XX Article 1241713 (Proceedings of SPIE : the International Society for Optical Engineering). SPIE. https://doi.org/10.1117/12.2649636

@inproceedings{a5136b4e54c44b819f1fced26ecada75,

title = "Spatial uniformity of black silicon induced junction photodiode responsivity",

abstract = "Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.",

keywords = "Black silicon, spatial uniformity, silicon, photodiode",

author = "Juha Heinonen and Antti Haarahiltunen and Ville V{\"a}h{\"a}nissi and Pasanen, {Toni P.} and Hele Savin and Juha Toivanen and Juntunen, {Mikko A.}",

year = "2023",

month = mar,

day = "14",

doi = "10.1117/12.2649636",

language = "English",

isbn = "978-1-5106-5939-1",

series = "Proceedings of SPIE : the International Society for Optical Engineering",

publisher = "SPIE",

editor = "Shibin Jiang and Digonnet, {Michel J.}",

booktitle = "Optical Components and Materials XX",

address = "United States",

note = "Optical Components and Materials ; Conference date: 28-01-2023 Through 03-02-2023",

}

Heinonen, J, Haarahiltunen, A, Vähänissi, V, Pasanen, TP, Savin, H, Toivanen, J & Juntunen, MA 2023, Spatial uniformity of black silicon induced junction photodiode responsivity. in S Jiang & MJ Digonnet (eds), Optical Components and Materials XX., 1241713, Proceedings of SPIE : the International Society for Optical Engineering, SPIE, Optical Components and Materials, San Francisco, California, United States, 28/01/2023. https://doi.org/10.1117/12.2649636

Spatial uniformity of black silicon induced junction photodiode responsivity. / Heinonen, Juha; Haarahiltunen, Antti; Vähänissi, Ville et al.
Optical Components and Materials XX. ed. / Shibin Jiang; Michel J. Digonnet. SPIE, 2023. 1241713 (Proceedings of SPIE : the International Society for Optical Engineering).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Spatial uniformity of black silicon induced junction photodiode responsivity

AU - Heinonen, Juha

AU - Haarahiltunen, Antti

AU - Vähänissi, Ville

AU - Pasanen, Toni P.

AU - Savin, Hele

AU - Toivanen, Juha

AU - Juntunen, Mikko A.

N1 - Conference code: 20

PY - 2023/3/14

Y1 - 2023/3/14

N2 - Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.

AB - Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.

KW - Black silicon

KW - spatial uniformity

KW - silicon

KW - photodiode

UR - http://www.scopus.com/inward/record.url?scp=85159772540&partnerID=8YFLogxK

U2 - 10.1117/12.2649636

DO - 10.1117/12.2649636

M3 - Conference article in proceedings

SN - 978-1-5106-5939-1

T3 - Proceedings of SPIE : the International Society for Optical Engineering

BT - Optical Components and Materials XX

A2 - Jiang, Shibin

A2 - Digonnet, Michel J.

PB - SPIE

T2 - Optical Components and Materials

Y2 - 28 January 2023 through 3 February 2023

ER -

Spatial uniformity of black silicon induced junction photodiode responsivity

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

PREIN: Photonics Research and Innovation

OtaNano

OtaNano - Nanofab

Cite this

Spatial uniformity of black silicon induced junction photodiode responsivity

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

PREIN: Photonics Research and Innovation

Equipment

OtaNano

OtaNano - Nanofab

Cite this