Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Juha Toivanen, Mikko A. Juntunen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Abstract

Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.
Original languageEnglish
Title of host publicationOptical Components and Materials XX
EditorsShibin Jiang, Michel J. Digonnet
PublisherSPIE
Number of pages7
ISBN (Electronic)978-1-5106-5940-7
DOIs
Publication statusPublished - 14 Mar 2023
MoE publication typeA4 Conference publication
EventOptical Components and Materials - San Francisco, United States
Duration: 28 Jan 20233 Feb 2023
Conference number: 20

Publication series

NameSPIE Conference Proceedings
PublisherSPIE
ISSN (Print)0277-786X

Conference

ConferenceOptical Components and Materials
Country/TerritoryUnited States
CitySan Francisco
Period28/01/202303/02/2023

Keywords

  • Black silicon
  • spatial uniformity
  • silicon
  • photodiode

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