Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Alexandre Bosser

  • V. Gupta
  • A. Javanainen
  • G. Tsiligiannis
  • S. D. Lalumondiere
  • D. Brewe
  • V. Ferlet-Cavrois
  • H. Puchner
  • H. Kettunen
  • T. Gil
  • F. Wrobel
  • F. Saigne
  • A. Virtanen
  • L. Dilillo

Research units

  • Universite de Montpellier
  • Jet Propulsion Laboratory, California Institute of Technology
  • Vanderbilt University
  • CERN
  • Aerospace Corporation
  • Argonne National Laboratory
  • ESTEC - European Space Research and Technology Centre
  • Cypress Semiconductor
  • University of Jyväskylä

Abstract

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Details

Original languageEnglish
Article number8268559
Pages (from-to)1708-1714
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number8
Publication statusPublished - 1 Aug 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • Dynamic test, ferroelectric random access memory (FRAM), heavy ion, single-event effect (SEE), single-event functional interrupt (SEFI), single-event upset, static test, X-ray

ID: 31645305