This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
- Dynamic test
- ferroelectric random access memory (FRAM)
- heavy ion
- single-event effect (SEE)
- single-event functional interrupt (SEFI)
- single-event upset
- static test