Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Leif Roschier, Jari Penttilä, Michel Martin, Pertti Hakonen, Mikko Paalanen, Unto Tapper, Esko I. Kauppinen, Catherine Journet, Patrick Bernier

Research output: Contribution to journalArticleScientificpeer-review

95 Citations (Scopus)
205 Downloads (Pure)

Abstract

A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.

Original languageEnglish
Pages (from-to)728-730
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number5
DOIs
Publication statusPublished - 2 Aug 1999
MoE publication typeA1 Journal article-refereed

Keywords

  • carbon nanotube
  • single-electron transistor

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