Single electron transistor fabricated on heavily doped silicon-on-lnsulator substrate

Antti Manninen*, Jari Kauranen, Jukka Pekola, Alexander Savin, Martin Kamp, Monika Emmerling, Alfred Forchel, Mika Prunnila, Jouni Ahopelto

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T -100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

Original languageEnglish
Pages (from-to)2013-2016
Number of pages4
JournalJapanese Journal of Applied Physics
Volume40, Part 1
Issue number3B
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • Coulomb blockade
  • Silicon on insulator
  • Single electron transistor

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